Method for patterning detector crystal using Q-switched laser

Details Method for patterning detector crystal using Q-switched laser Method for patterning detector crystal using Q-switched laser

2007-04-26

2010-06-01

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S459000, C257S461000, C257SE31002, C257SE31120

Reexamination Certificate

active

07727796

ABSTRACT:
A semiconductor radiation detector crystal is patterned by using a Q-switched laser to selectively remove material from a surface of said semiconductor radiation detector crystal, thus producing a groove in said surface that penetrates deeper than the thickness of a diffused layer on said surface.

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Communication from European Patent Application No. 08167085.3 with European Search Report (6 pages).

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