Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-19
2005-07-19
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S671000, C438S712000, C438S720000, C438S942000, C438S945000
Reexamination Certificate
active
06919272
ABSTRACT:
A method of patterning a metal layer in a semiconductor die comprises forming a mask on the metal layer to define an open region and a dense region. The method further comprises etching the metal layer at a first etch rate to form a number of metal segments in the open region and etching the metal layer at a second etch rate to form a number of metal segments in the dense region, where the first etch rate is approximately equal to the second etch rate. The method further comprises performing a number of strip/passivate cycles to remove a polymer formed on sidewalls of the metal segments in the dense region. The sidewalls of the metal segments in the dense region undergo substantially no undercutting and residue is removed from the sidewalls of the metal segments in the dense region.
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Abdul-Ridha Hadi
Dornisch Dieter
Howard David J.
Wang Tinghao F.
Wu Julia M.
Farjami & Farjami LLP
Guerrero Maria F.
Newport Fab LLC
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