Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Amorphous semiconductor
Reexamination Certificate
2011-08-09
2011-08-09
Nguyen, Ha Tran T (Department: 2829)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Amorphous semiconductor
C438S609000
Reexamination Certificate
active
07994029
ABSTRACT:
A method for patterning crystalline indium tin oxide (ITO) using femtosecond laser is disclosed, which comprises steps of: (a) providing a substrate with an amorphous ITO layer thereon; (b) transferring the amorphous ITO layer in a predetermined area into a crystalline ITO layer by emitting a femtosecond laser beam to the amorphous ITO layer in the predetermined area; and (c) removing the amorphous ITO layer on the substrate using an etching solution.
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Cheng Chung-Wei
Grigoropoulos Costas P.
Hwang David Jen
Kim Moo-sung
Dehne Aaron
Industrial Technology Research Institute
King Justin
Nguyen Ha Tran T
The Regents of the University of California
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