Method for patterning a semiconductor device

Details Method for patterning a semiconductor device Method for patterning a semiconductor device

2011-05-17

2011-05-17

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S695000, C438S735000, C257SE21023, C257SE21027

Reexamination Certificate

active

07943521

ABSTRACT:
A method for patterning a semiconductor device can include forming a conductive layer over a semiconductor substrate; alternatively forming positive photoresists and negative photoresists over the conductive layer, forming a plurality of first conductive lines by selectively removing a portion of the conductive layer using the positive photoresist and the negative photoresist as masks; forming an oxide film over the semiconductor substrate including the first conductive lines and the conductive layer; performing a planarization process over the oxide film using the uppermost surface of the first conductive line as a target; removing the plurality of first conductive lines using the oxide film as a mask; forming a plurality if trenches in the semiconductor substrate and removing a portion of the oxide film to expose the uppermost surface of the conductive layer; and then forming a plurality of second conductive lines by removing the exposed conductive layer using the oxide film as a mask.

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