Method for pattern formation and process for preparing semicondu

Details Method for pattern formation and process for preparing semicondu Method for pattern formation and process for preparing semicondu

1999-11-03

2000-12-05

Huff, Mark F.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430318, 430322, 430325, G03F 700

Patent

active

061564869

ABSTRACT:
A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.

REFERENCES:
patent: 4942113 (1990-07-01), Trundle
Y. Tsuchiya et al, "Investigation of Acid-Catalyzed Insolubilization Reactions for Alicyclic Polymers with Carboxyl Groups", Journal of Photopolymer Science and Technology, vol. 10, No. 4, 1997, pp. 579-584.
F.M. Houlihan et al, "Synthesis of Cycloolefin-Maleic Anhydride Alternating Coppolymers for 193 nm Imaging", Macromolecules, 1997, 30, pp. 6517-6524.

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