Method for passivating gate dielectric films

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Reexamination Certificate

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Details

Other Related Categories

C257S288000, C257S289000

Type

Reexamination Certificate

Status

active

Patent number

07667247

Description

ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3or CN species.

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patent: 2008/0096394 (2008-04-01), Chen et al.

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