Method for passivating gate dielectric films

Details Method for passivating gate dielectric films Method for passivating gate dielectric films

2007-05-08

2010-02-23

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S288000, C257S289000

Reexamination Certificate

active

07667247

ABSTRACT:
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor substrate, forming a dielectric layer over the semiconductor substrate, treating the dielectric layer with a carbon containing group, forming a conductive layer over the treated dielectric layer, and patterning and etching the dielectric layer and conductive layer to form a gate structure. The carbon containing group includes an OCH3or CN species.

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