Method for passivating crystal silicon surfaces

Details Method for passivating crystal silicon surfaces Method for passivating crystal silicon surfaces

2004-08-26

2009-12-08

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C136S249000, C136S261000, C427S074000, C427S255393, C427S255394, C438S057000, C438S482000, C438S490000, C438S492000, C438S503000

Reexamination Certificate

active

07629236

ABSTRACT:
In a method of making a c-Si-based cell or a μc-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH3/H2through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH3/H2.

REFERENCES:
patent: 5903047 (1999-05-01), Liao et al.
patent: 6734037 (2004-05-01), Fath et al.
patent: 6746709 (2004-06-01), Lauinger et al.
patent: 2004/0112426 (2004-06-01), Hagino
patent: 60136259 (1985-07-01), None

Affiliated with

Also associated with

Rating

Method for passivating crystal silicon surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for passivating crystal silicon surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for passivating crystal silicon surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4121659