Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-07-16
2010-11-02
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23181, C257S698000, C257S777000, C438S118000
Reexamination Certificate
active
07825517
ABSTRACT:
An integrated circuit structure is provided. The integrated circuit structure includes a die and an anisotropic conducing film (ACF) adjoining the back surface of the die. The die includes a front surface; a back surface on an opposite side of the die than the front surface; and a through-silicon via (TSV) exposed through the back surface of the die.
REFERENCES:
patent: 6429096 (2002-08-01), Yanagida
patent: 6667542 (2003-12-01), Yamaguchi et al.
patent: 6794751 (2004-09-01), Kumamoto
patent: 7098076 (2006-08-01), Liu
patent: 7169648 (2007-01-01), Sato et al.
patent: 7279776 (2007-10-01), Morimoto
patent: 7537959 (2009-05-01), Lee et al.
patent: 7588964 (2009-09-01), Kwon et al.
patent: 2007/0158787 (2007-07-01), Chanchani
patent: 1591884 (2005-03-01), None
patent: 1937216 (2007-03-01), None
patent: 2006/012737 (2006-01-01), None
Chu Chris
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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