Method for packaging semiconductor dies having...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257SE23181, C257S698000, C257S777000, C438S118000

Reexamination Certificate

active

07825517

ABSTRACT:
An integrated circuit structure is provided. The integrated circuit structure includes a die and an anisotropic conducing film (ACF) adjoining the back surface of the die. The die includes a front surface; a back surface on an opposite side of the die than the front surface; and a through-silicon via (TSV) exposed through the back surface of the die.

REFERENCES:
patent: 6429096 (2002-08-01), Yanagida
patent: 6667542 (2003-12-01), Yamaguchi et al.
patent: 6794751 (2004-09-01), Kumamoto
patent: 7098076 (2006-08-01), Liu
patent: 7169648 (2007-01-01), Sato et al.
patent: 7279776 (2007-10-01), Morimoto
patent: 7537959 (2009-05-01), Lee et al.
patent: 7588964 (2009-09-01), Kwon et al.
patent: 2007/0158787 (2007-07-01), Chanchani
patent: 1591884 (2005-03-01), None
patent: 1937216 (2007-03-01), None
patent: 2006/012737 (2006-01-01), None

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