Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1997-06-04
2000-02-29
Trinh, Michael
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
438 52, 438614, 438678, 430312, H01L 2100
Patent
active
060308516
ABSTRACT:
A structure and method of fabrication is provided for a micromechanical overrange protected pressure sensor. A pressure sensor having a silicon substrate is provided with a cavity and a deformable diaphragm wherein deflection of the diaphragm in response to pressure is limited by a forward pressure stop. A method is provided for electrodepositing a metal layer which is attached to the substrate adjacent to the diaphragm to provide a reverse pressure stop in response to pressure supplied to the underside of a diaphragm. The metal layer has a relatively low thermal coefficient of expansion and is patterned through use of a photo-resist layer. A previously deposited precision spacer between the diaphragm and reverse pressure stop is removed to provide a precision gap between the reverse pressure stop and the diaphragm.
Micromechanical elements of relatively great size, yet having precision dimensions or positioning are herein fabricated by lithography of patterned resist films up to several hundred microns thick, exposed and developed to great depth with faithful pattern delineation. The patterns formed by development of the exposed resist are then metallized, preferably by pulse electroplating, to form structural or mechanical elements. Deep film patterning may be achieved by laying down successive layers of a dry film resist and exposing each layer after it is deposited.
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Fung Clifford D.
Grandmont Paul E.
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