Method for optimizing the characteristics of integrated...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C703S014000, C703S015000, C703S016000

Reexamination Certificate

active

07047505

ABSTRACT:
A method for selecting a process for forming a device, includes generating a plurality of equations using a response surface methodology model. Each equation relates a respective device simulator input parameter to a respective combination of processing parameters that can be used to form the device or a respective combination of device characteristics. A model of a figure-of-merit circuit is formed that is representative of an integrated circuit into which the device is to be incorporated. One of the combinations of processing parameters or combinations of device characteristics is identified that results in a device satisfying a set of performance specifications for the figure-of-merit circuit, using the plurality of equations and the device simulator.

REFERENCES:
patent: 5572436 (1996-11-01), Dangelo et al.
patent: 5646870 (1997-07-01), Krivokapic et al.
patent: 5867405 (1999-02-01), Jiang et al.
patent: 5870308 (1999-02-01), Dangelo et al.
patent: 6219630 (2001-04-01), Yonezawa et al.
patent: 2002/0073388 (2002-06-01), Orshansky et al.
Saxena et al., “Circuit-Device Co-design for High Performance Mixed-Signal Technologies”, 2000 IEEE, pp. 143-146.
Barry, Michael, “Estimating the Effects of Process Technology Improvements on Microprocessor Performance”, 1994 IEEE, pp. 276-279.
Saxena et al. “An Asymptotically Constant, linearly Bounded Methodology for the Statistical Simulation of Analog Circuits Including Component Mismatch Effects”, 200, pp. 15-18.
Winslow and Trew, “Simulated Performance Optimization of GaAs MESFET Amplifiers”, 1991 IEEE, pp. 393-402.
Stoneking et al., “Simulation of the Variation and Sensitivity of GaAs MESFET Large-Signal Figures-of-Merit due to Process, Material, Parasitic, and Bias Parameters”, 1989 IEEE, pp. 228-236.

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