Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-09-26
2006-09-26
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S097000, C365S209000
Reexamination Certificate
active
07113422
ABSTRACT:
A method to adjust an operating parameter of a magnetoresistive random access memory having a tunable circuit, such as a bias control circuit, provides for measuring the operating parameter, such as a word current or sense current, of the magnetoresistive random access memory to obtain a measured operating parameter result and tuning the tunable circuit, such as with trimmable resistors, based on the measured operating parameter result. A method is also provided to adjust an operating parameter of a wafer of magnetic random access memories each having a tunable circuit by measuring the operating parameter one or more of the magnetic random access memories to obtain a measured operating parameter result and tuning some or all of the tunable circuits based on the measured operating parameter result.
REFERENCES:
patent: 5946227 (1999-08-01), Naji
patent: 6246630 (2001-06-01), Hosokawa et al.
patent: 6341084 (2002-01-01), Numata et al.
patent: 6385111 (2002-05-01), Tran et al.
patent: 6407946 (2002-06-01), Maruyama et al.
patent: 6590804 (2003-07-01), Perner
patent: 6674679 (2004-01-01), Perner et al.
patent: 6683815 (2004-01-01), Chen et al.
patent: 6700814 (2004-03-01), Nahas et al.
patent: 6791874 (2004-09-01), Tran et al.
patent: 6795340 (2004-09-01), Sakimura et al.
patent: 6803615 (2004-10-01), Sin et al.
patent: 6804144 (2004-10-01), Iwata
patent: 6834017 (2004-12-01), Perner et al.
patent: 6873543 (2005-03-01), Smith et al.
patent: 2004/0085122 (2004-05-01), Perner et al.
patent: 2004/0228170 (2004-11-01), Brennan et al.
patent: 2005/0083748 (2005-04-01), Lemus et al.
Hoang Huan
Jones Day
Union Semiconductor Technology Corporation
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