Method for optimizing a gap for plasma processing

Details Method for optimizing a gap for plasma processing Method for optimizing a gap for plasma processing

1997-08-12

1999-03-09

Kunemund, Robert

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

216 71, 216 67, 438710, 438729, 20429832, 20419213, 20419233, C23F 102

Patent

active

058795731

ABSTRACT:
An optimal gap is determined between a lower electrode and an upper electrode in a plasma processing device. A gap is set between the lower electrode and the upper electrode, and a substrate is processed in the plasma processing chamber. The processing results are obtained, and the processing rate and uniformity are determined from the processing results. The processing rate and uniformity are plotted with the gap setting. The steps of setting, processing, obtaining, determining, and plotting are repeated for additional substrates, the gap setting being different for each substrate. The optimal gap setting is selected as the gap setting corresponding to an optimal processing rate and an optimal uniformity.

REFERENCES:
patent: 3280016 (1966-10-01), Bass
patent: 4578559 (1986-03-01), Hijikata
patent: 4654106 (1987-03-01), Davis
patent: 5110437 (1992-05-01), Yamada
patent: 5354413 (1994-10-01), Smesny
patent: 5413673 (1995-05-01), Fujimoto
patent: 5584933 (1996-12-01), Saito

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