Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-18
2006-04-18
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S586000, C438S482000
Reexamination Certificate
active
07029961
ABSTRACT:
A laser annealing mask is provided with cross-hatched sub-resolution aperture patterns. The mask comprises a first section with aperture patterns for transmitting approximately 100% of incident light, and at least one section with cross-hatched sub-resolution aperture patterns for diffracting incident light. In one aspect, a second mask section with cross-hatched sub-resolution aperture patterns has an area adjacent a vertical edge and a third mask section with cross-hatched sub-resolution aperture patterns adjacent the opposite vertical edge, with the first mask section being located between the second and third mask sections. The section with cross-hatched sub-resolution aperture patterns transmits approximately 40% to 70%, and preferably 50% to 60% of incident light energy density. In some aspects, the section with cross-hatched sub-resolution aperture patterns includes a plurality of different cross-hatched aperture patterns. The cross-hatched sub-resolution aperture patterns can be defined by horizontal gap and slits, as well as vertical gap and slits.
REFERENCES:
patent: 6388386 (2002-05-01), Kunii et al.
patent: 6680460 (2004-01-01), Takaoka et al.
patent: 6734635 (2004-05-01), Kunii et al.
Crowder Mark Albert
Mitani Yasuhiro
Voutsas Apostolos T.
Goodwin David
Ripma David C.
Sharp Laboratories of America Inc.
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