Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-10-20
2000-12-12
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 2978, H01L 3300
Patent
active
061602868
ABSTRACT:
A flash memory cell formed in a semiconductor substrate is disclosed. The cell includes a deep n-well formed within the substrate. Next, a p-well is formed within the deep n-well and a n+ drain region is formed within the p-well. A floating gate is formed above the p-well being separated from the substrate by a thin oxide layer. The floating gate is formed adjacent to the n+ drain region. Finally, a control gate is formed above the floating gate, the floating gate and the control gate being separated by a dielectric layer. The new cell is read by measuring the GIDL current at n+/p-well junction, which is exponentially modulated by the floating gate potential (or its net charge). The new cell is programmed by substrate hot electron injection and is erased by F-N tunneling through the overlap area of floating gate and p-well.
REFERENCES:
patent: 5814853 (1998-09-01), Chen
patent: 5847426 (1998-12-01), Bergemont
Meier Stephen D.
Worldwide Semiconductor Manufacturing Corporation
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