Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-01-25
2005-01-25
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185330
Reexamination Certificate
active
06847556
ABSTRACT:
Provided is a method for operating a NOR-type flash memory device using SONOS cells. The SONOS cells are selectively programmed using channel hot electron injection and erased using Fowler-Nordheim tunneling and hot hole injection. When the SONOS cells are programmed, a voltage within a range of 8V-12V is applied to a selected word line and a voltage within a range of 3V-6V is applied to a selected bit line. When the SONOS cells are erased, the selected word line is ground and a voltage within a range of 13V-18V is applied to a substrate. Alternatively, a voltage of about −8V is applied to the selected word line, a voltage of about 6V is applied to the substrate, and a bit line and a source line float.
REFERENCES:
patent: 6512694 (2003-01-01), Herdt
patent: 6587380 (2003-07-01), Kanai et al.
patent: 6768681 (2004-07-01), Kim
Hoang Huan
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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