Method for operating an electrical writable and erasable...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185030, C365S185240

Reexamination Certificate

active

07411837

ABSTRACT:
A method is provided for operating an electrical writable and erasable memory cell, which has a channel region that can be operated in a first and a second direction, wherein information is stored as the difference of an effective parameter.

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Eitan, B., “NROM: A Novel Localized Trapping, 2-Bit Nonvolatile Memory Cell,” IEEE Electron Device Letters, vol. 21, No. 11, Nov. 2000, pp. 543-545.

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