Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2005-04-19
2005-04-19
Auduong, Gene N. (Department: 2818)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230030, C365S230060
Reexamination Certificate
active
06882584
ABSTRACT:
A semiconductor memory and a method for operating the semiconductor memory store information items at least in triplicate at memory addresses in a plurality of memory areas, preferably memory banks, and read the information items therefrom. A checking unit contains synchronization circuits compares the data values that are read and, if the information items that are read differ, can ascertain and possibly immediately correct storage errors. The method of operating the memory enables quasi-random access to memory cells using a permutation circuit. In a test mode for the semiconductor memory, an error log circuit can output error log data instead of or in addition to data values that are read.
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Auduong Gene N.
Greenberg Laurence A.
Infineon - Technologies AG
Locher Ralph E.
Stemer Werner H.
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