Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2005-08-30
2005-08-30
Lam, David (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S189011, C365S222000
Reexamination Certificate
active
06937500
ABSTRACT:
A matrix-addressable ferroelectric or electret memory device and a method of operating are explained. The method includes applying a first plurality of voltage difference across a first and a second set of electrodes in the memory when data are read, and applying a second plurality of voltage differences when data are refreshed or rewritten. The first and second plurality of voltage differences correspond to sets of potential levels comprising time sequences of voltage pulses. At least one parameter indicative of a change in a memory cell response is used for determining at least one correction factor for the voltage pulses, whereby the pulse parameter is adjusted accordingly. The memory device comprises means for determining the at least one parameter, a calibration memory connected with means for determining the correction factor, and control circuits for adjusting pulse parameters as applied to read and write operations in the memory device.
REFERENCES:
patent: 5487029 (1996-01-01), Kuroda
patent: 5777921 (1998-07-01), Takata et al.
patent: 6272037 (2001-08-01), Miyamoto
patent: 6392916 (2002-05-01), Choi et al.
patent: 6606261 (2003-08-01), Gudeson et al.
patent: 2002/0024837 (2002-02-01), Iwanari
patent: 2002/0060923 (2002-05-01), Thompson et al.
patent: 10083679 (1998-03-01), None
patent: 2002313076 (2002-10-01), None
patent: 312698 (2002-01-01), None
patent: 312699 (2002-01-01), None
patent: 20003507 (2002-01-01), None
patent: 20003508 (2002-01-01), None
patent: WO 02/05287 (2002-01-01), None
Bröms Per
Gudesen Hans Gude
Johansson Mats
Leistad Geirr I.
Nordal Per-Erik
Birch & Stewart Kolasch & Birch, LLP
Lam David
Thin Film Electronics ASA
LandOfFree
Method for operating a ferroelectric of electret memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for operating a ferroelectric of electret memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for operating a ferroelectric of electret memory... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3520450