Method for observing tungsten plug of semiconductor device micro

Details Method for observing tungsten plug of semiconductor device micro Method for observing tungsten plug of semiconductor device micro

1997-02-27

1999-11-23

Bowers, Charles

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

438 16, 438 18, 438648, 438683, 438685, 438785, G01R 2100

Patent

active

059899301

ABSTRACT:
A method of observing a tungsten plug of a semiconductor device using a microscope includes cutting the semiconductor device at the center of the tungsten plug. The semiconductor device is then stained with a reagent which includes hydrogen peroxide and ammonia and etched with a solution containing hydrofluoric acid. The fine structure of the grain of the tungsten plug of the semiconductor device is then observed with a microscope.

REFERENCES:
patent: 5736863 (1998-04-01), Liu
Nanda, Characterization of the nucleation and growth process of CVD-W on TiN substrates, Materials Research Society, 401-406, 1995.
Ting, Reduction in flux divergence at vias for improved electromigration in multilayered AICu interconnects, Applied Physics Letters, 2134-2136, Sep. 30, 1996.

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