Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-08-28
1998-08-18
Beck, Shrive
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438674, 438677, 427253, 427255, 4272551, 4272557, C23C 1608
Patent
active
057958246
ABSTRACT:
A tungsten (W) film is formed on a surface of a semiconductor substrate by providing to that surface gas mixtures tailored for both reduced gas phase nucleation of particulates (GPN) and attack of exposed silicon (Si) or titanium (Ti) surfaces (Device Attack) while maintaining a high W deposition rate. An initiation step is performed where the surface is preconditioned with hydrogen (H.sub.2) and silane (SiH.sub.4). A subsequent nucleation step then uses a mixture of H.sub.2 and SiH.sub.4 to reduce tungsten hexafluoride (WF.sub.6) and thus form a first thickness of the W film. In some embodiments, an alternate gas mixture can be employed to form a second thickness of W on the surface of the semiconductor substrate.
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F. Cumplan et al., "Parametric Study of H.sub.2 Doped SiH.sub.4 /Wf.sub.6 Nucleation on Ti/TiN by Tungsten CVD Process," Advanced Metallization and Interconnect Systems for ULSI Application in Oct. 1995, pp. 529-534
Beck Shrive
Berman Bernard
Meeks Timothy
Novellus Systems Inc.
Steuber David E.
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