Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-07-03
2010-02-02
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S455000, C438S798000, C257SE21088
Reexamination Certificate
active
07655578
ABSTRACT:
Under consideration here is a method for the production of periodic nanostructuring on one of the surfaces of a substrate (10), presenting a periodic network of dislocations, embedded within a crystalline area (4) located in the neighborhood of an interface (5) between the crystalline material surfaces of two components (1, 2) assembled by bonding to form the substrate (10). It comprises the following steps:formation, in the dislocations (3), of implants (6) made of a material other than that of the crystalline area (4);irradiation of the substrate (10) with electromagnetic waves (11) in order to cause absorption of electromagnetic energy localized in the implants (6), this absorption leading to the appearance of the periodic nanostructuring (12) on the surface of the substrate (10).
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Bavard Alexis
Fournel Frank
Garrelie Florence
Meziere Jérôme
Pigeon Florent
Centre National de la Recherche Scientifique
Commissariat a l''Energie Atomique
Ghyka Alexander G
Isaac Stanetta D
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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