Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-01-03
2000-09-12
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438615, 22818022, H01L 2144, B23K 3100, B23K 3102
Patent
active
061177598
ABSTRACT:
Multiplexed joining of solder bumps to various substrates for assembly of an integrated circuit package includes placing a semiconductor substrate (312) having solder bump structures (314) in contact with a ceramic substrate (320 having chip pads (322, 334), and placing this structure in contact with ball grid array spheres (352) in order to form a CBGA (360) in a single flow process. The method includes the steps of providing a semiconductor device having at least one first interconnect structure connected to a surface of the semiconductor device (501), and a substrate having a plurality of metallized pads (503); placing an at least one second interconnect structure in aligned contact with one or more of the plurality of metallized pads (505); placing the at least one first interconnect structure in aligned contact with one or more of the plurality of metallized pads (507); and simultaneously reflowing the at least one first interconnect structure and the at least one second interconnect structure such that the semiconductor device and at least one second interconnect structure are connected to the metallized pads of the substrate (509).
REFERENCES:
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patent: 5131584 (1992-07-01), Boitel
patent: 5188280 (1993-02-01), Nakao et al.
patent: 5658827 (1997-08-01), Aulicino
patent: 5729896 (1998-03-01), Dalal
Tetsuo, "Manufacture of Semiconductor Device," Patent Abstracts of Japan, 1 pg.
Burnette Terry Edward
Clegg David
Greer Stuart E.
Berezny Nema
Bowers Charles
Clingan Jr. James L.
Motorola Inc.
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