Method for multiple step programming a memory cell

Details Method for multiple step programming a memory cell Method for multiple step programming a memory cell

2008-06-24

2008-06-24

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Bad bit

C365S185020, C365S185260, C365S185280

Reexamination Certificate

active

07391659

ABSTRACT:
A memory cell is programmed by injecting charge into a charge storage layer of the memory cell. A desired programmed charge results in the charge storage layer over an edge portion of a channel region of the memory cell. An undesired programmed charge results in the charge storage layer over an inner portion of the channel region. Charge tunneling is used to substantially remove the undesired programmed charge in the charge storage layer. In one form the memory cell has a substrate having a channel region, a first dielectric layer over the substrate and a charge storage layer over the first dielectric layer. A second dielectric layer over the charge storage layer has a first portion that is thicker than a second portion to selectively control the charge tunneling.

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