Method for monocrystalline growth of dissociative compound semic

Details Method for monocrystalline growth of dissociative compound semic Method for monocrystalline growth of dissociative compound semic

1989-08-18

1991-12-24

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156 7, 1566171, 1566181, 1566202, 156DIG70, 422112, 422249, C30B 1520

Patent

active

050749536

ABSTRACT:
The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in an outer air-tight vessel. The second material is contained in a crucible supported in the inner vessel by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, temperature of a furnace installed on the inner vessel is adjusted so that the pressure of the gas of the first volatile component material in the inner vessel is controlled. A single crystal is pulled up from the melt by an upper shaft extending from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up step includes the steps of: measuring the weight of the growing crystal, the weight influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the crystal for the error due to the pressure difference, thereby obtaining an accurate estimate of the weight of the crystal; and controlling a diameter of the growing crystal on the basis of the weight estimate of the crystal.

REFERENCES:
patent: 4008387 (1977-02-01), Green et al.
patent: 4032389 (1977-06-01), Joyce
patent: 4565598 (1986-01-01), Seymour
patent: 4586979 (1986-05-01), Katsumata et al.
patent: 4596700 (1986-06-01), Tada et al.
patent: 4704257 (1987-03-01), Tomizawa et al.
Bardsley et al., "The Weighing Method of Automatic Czochralski Crystal Growth", Journal of Crystal Growth, vol. 40, No. 1 (1977), pp. 21 to 28.

Affiliated with

Also associated with

Rating

Method for monocrystalline growth of dissociative compound semic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for monocrystalline growth of dissociative compound semic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for monocrystalline growth of dissociative compound semic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-41338