Method for monocrystaline growth of dissociative compound semico

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156607, 1566171, 1566181, 1566202, 156DIG70, 422249, C30B 1522

Patent

active

050910434

ABSTRACT:
The present invention relates to a method and apparatus for mono-crystalline growth of a dissociative compound semiconductor. The method, which is based on the Czochralski method, includes the following steps. First, a first volatile component material and second material of the dissociative compound semiconductor are prepared. The first material is placed on the bottom of an inner air-tight vessel which is contained in the outer air-tight vessel. The second material is contained in a crucible in the inner vessel. The crucible is supported by a lower shaft extending from the inside to the outside of the inner vessel. The first material is, next, heated for evaporating so as to react with the second material in the crucible. Therefore, the dissociative compound semiconductor is synthesized in the crucible. Then, a single crystal is pulled up from the melt by an upper shaft. The upper shaft extends from inside to outside of the inner vessel, thereby the single crystal is grown. The improvement is that the pulling-up process includes the steps of, after the heating step: measuring the weight of the melt in the crucible, the weight of the melt being influenced by a difference between the interior pressure of the inner vessel and a pressure outside of the inner vessel; correcting the measured weight of the melt for the error due to the pressure difference, thereby obtaining an accurate data of the weight of the melt; and controlling at least one of a composition and a diameter of the growing crystal on the basis of the weight data of the melt.

REFERENCES:
patent: 4008387 (1977-02-01), Green et al.
patent: 4032389 (1977-06-01), Joyce
patent: 4565598 (1986-01-01), Seymour
patent: 4586979 (1986-05-01), Katsumata et al.
patent: 4596700 (1986-06-01), Tada et al.
patent: 4704257 (1987-03-01), Tomizawa et al.
Bardsley et al, "The Weighing Method of Automatic Czochralski Crystal Growth," Journal of Crystal Growth, vol. 40, No. 1 (1977), pp. 21-28.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for monocrystaline growth of dissociative compound semico does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for monocrystaline growth of dissociative compound semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for monocrystaline growth of dissociative compound semico will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1890669

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.