Method for monitoring thickness of epitaxial growth layer on sub

Details Method for monitoring thickness of epitaxial growth layer on sub Method for monitoring thickness of epitaxial growth layer on sub

1978-05-02

1980-05-20

Richman, Barry S.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148175, 156612, 156613, 156614, 156DIG64, 356357, 356358, 427 10, B01J 1730, B01J 1732, B01J 1740, G01B 1938

Patent

active

042037999

ABSTRACT:
In growing on a substrate a film of substance of a similar kind to the substrate, ions are implanted into the substrate to form within the substrate a layer of substance having an optical property different from that of the substrate, and an epitaxial film is then grown. Thus, the thickness of the film can be monitored with an interference waveform appearing with its growth.

REFERENCES:
patent: 3099579 (1963-07-01), Spitzer et al.
patent: 3620814 (1971-11-01), Clark et al.
patent: 3984263 (1978-10-01), Asao et al.
"Interference . . . "; Soviet Physics-Semi-Conductors; vol. 5; No. 5; 11-1971.
"In-Process . . . "; J. Electrochem. Soc.; vol. 119, No. 1; 1971.
"Measurement . . . "; Review of Scientific Instruments; vol. 38; No. 8; 1967.
"Nondestructive . . . "; J. Electrochem. Soc.; vol. 119; No. 1; 1972.

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