Method for molecular-beam epitaxial growth

Details Method for molecular-beam epitaxial growth Method for molecular-beam epitaxial growth

1991-01-10

1992-06-09

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156612, 156614, 148DIG6, 148DIG46, 148DIG48, 148DIG169, 437 81, 437105, 437107, 437930, 437935, 437936, 437987, C30B 2516

Patent

active

051203936

ABSTRACT:
Flatness of atomic-accuracy is achieved in an MBE epitaxial growth process by imparting kinetic energy to atoms absorbed on a substrate by means of irradiation by ion-beam for surface bombardment. Ion-beam surface bombardment may also be used for evaluation. The molecular-beam for epitaxial growth and the ion bombardment for surface energization and surface evaluation may all be operated in a pulse mode and synchronized so that evaluation and growth are conducted alternately while growth and energization are conducted simultaneously.

REFERENCES:
patent: 4071383 (1978-01-01), Nagata et al.
patent: 4086108 (1978-04-01), Gonda
patent: 4226648 (1980-10-01), Goodwin et al.
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4550031 (1985-10-01), Abrokwah
patent: 4800100 (1989-01-01), Herbots et al.
patent: 4847216 (1989-07-01), d'Avitaya et al.
patent: 4855013 (1989-08-01), Ohta et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
Farrow, "The Use of Ion Beams in Molecular Beam Epitaxy", Thin Solid Films, 80 (1981), pp. 197-211.
Parker, The Technology and Physics of Molecular Beam Epitaxy, Plenum Press, New York, 1985, pp. 40-41.

Affiliated with

Also associated with

Rating

Method for molecular-beam epitaxial growth does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for molecular-beam epitaxial growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for molecular-beam epitaxial growth will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802190