Method for modifying circuit within substrate

Details Method for modifying circuit within substrate Method for modifying circuit within substrate

2008-09-09

2008-09-09

Lebentritt, Michael S. (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S048000, C438S961000, C257SE21369, C257SE21052, C257SE29043, C257SE31124, C257SE33062

Reexamination Certificate

active

11319621

ABSTRACT:
A method is provided for modifying a circuit containing a plurality of electrodes, within a substrate, comprising the steps of: (a) selecting at least two electrodes for making a connection; (b) removing materials covering the electrodes with a focused ion beam (FIB) or a laser to form contact holes for respectively exposing the electrodes; (c) depositing in the contact holes a conductive material for forming electrically conductive piers, by applying the focused ion beam (FIB) or laser, with gas molecules ejected from a nozzle; (d) disposing an electrically conductive viscid material over each of the electrically conductive piers; and (e) disposing an electrically conductive bridge floor to connect with the electrically conductive viscid material to form an electrically conductive bridge.

REFERENCES:
patent: 5844168 (1998-12-01), Schueller et al.
patent: 2004/0238910 (2004-12-01), Fujii et al.

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