Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2007-06-28
2010-08-31
Whitmore, Stacy A (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000
Reexamination Certificate
active
07788611
ABSTRACT:
A method models the electrical characteristics of wide-channel transistors, such as power transistors, by generating a lumped-element distributed circuit model. More specifically, the active area of the transistor is organized in elementary transistor cells, which are substituted by active lumped elements. Similarly the passive area of the transistor is organized in elementary strip-lines, which are substituted by passive lumped elements. Preferably, the parameters of the lumped elements are extracted automatically from layout information, such as path dimensions, and technological data, such as sheet resistance of the metal layers, sheet resistance of the polysilicon layers and oxide thickness.
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Turlington, “Behavioral Mode
Bazzano Gaetano
Biondi Tonio Gaetano
Greco Giuseppe
Rinaudo Salvatore
Jorgenson Lisa K.
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Tarleton E. Russell
Whitmore Stacy A
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