Method for minimizing corner effect by densifying the...

Details Method for minimizing corner effect by densifying the... Method for minimizing corner effect by densifying the...

2007-08-21

2007-08-21

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C257SE21278, C257SE21079

Reexamination Certificate

active

09462716

ABSTRACT:
The invention concerns a method for minimizing “corner” effects in shallow silicon oxide trenches, by densifying the silicon oxide layer after it has been deposited in the trenches. Said densification is preferably carried out by irradiating the layer under luminous radiation with weak wavelength.

REFERENCES:
patent: 0199965 (1986-03-01), None
Seward et al, Densification of Synthetic fused Silica under ultraviolet irradiation, Journal of Non-Crystalline Solids 222 (1997) 407-414.

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