Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1991-11-27
1995-05-09
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, C23C 1434
Patent
active
054136873
ABSTRACT:
In accordance with the present invention, it has been discovered that bias sputtering a metal layer (e.g., copper or aluminum) in an atmosphere of a mixture of ammonia and a noble gas leads to dramatically improved adhesion between deposited metal and a fluoropolymer substrate. Preferably, the bias sputtering takes place in an ammonia/argon gas mixture and most preferably in ammonia/argon gas mixture of 5 to 50 volume % ammonia and 50 to 95 volume % argon (most preferably 90/10 argon/ammonia). The use of an ammonia
oble gas atmosphere for bias sputtering is especially well suited for bias sputtering of copper seed layers onto fluoropolymer substrates. In general, the process for depositing a metal layer onto a surface of a fluoropolymer substrate in accordance with the present invention includes the steps of securing the fluoropolymer substrate to an electrically isolated conductive member (e.g. drum) within a vacuum chamber, evacuating the chamber, introducing a flow of a gas mixture of ammonia and a noble gas (preferably argon) through the chamber and bias sputtering a metal (preferably copper) onto the surface of the fluoropolymer substrate while maintaining the flow of the ammonia
oble gas mixture. Preferably, an ammonia plasma pretreatment of the substrate is also used. Also, the drum is preferably rotated during the ammonia plasma pretreatment.
REFERENCES:
patent: 4731156 (1988-03-01), Montmarquet
patent: 4795660 (1989-01-01), Cooray et al.
patent: 4826720 (1989-05-01), Wade
patent: 4927505 (1990-05-01), Sharma et al.
Barton Carlos L.
McGraw Robert B.
Nguyen Nam X.
Rogers Corporation
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