Method for metallizing a semiconductor wafer

Details Method for metallizing a semiconductor wafer Method for metallizing a semiconductor wafer

1993-09-17

1995-08-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437192, 437194, H01L 2144, H01L 2148

Patent

active

054439957

ABSTRACT:
A method for metallizing semiconductor materials includes two processing steps. In the first step, a layer of an alloy of conductive metal, such as aluminum, and refractory metal, such as titanium, tungsten or silicon, is deposited on the surface in a single step from a single source. In the second step, a layer of the conductive metal is deposited over the alloy layer. Thus, using this method, metallization can be conveniently performed using two chambers.

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patent: 5202008 (1993-04-01), Talieh et al.
patent: 5229325 (1993-07-01), Park et al.
patent: 5238874 (1993-08-01), Yamada
Wolf et al. vol. 1, Silicon processing for VLSI Era. pp. 359-365, 391-392, 1986.
Wolf vol. 2, Silicon processing for VLSI Era pp. 245-255, 279-286., 1990.

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