Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-29
2011-12-20
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S634000, C257SE21579
Reexamination Certificate
active
08080473
ABSTRACT:
A method of patterning a film stack is described. The method comprises preparing a film stack on a substrate, wherein the film stack comprises a SiCOH-containing layer formed on the substrate, a silicon oxide (SiOx) layer formed on the SiCOH-containing layer, and a mask layer formed on the silicon oxide layer. A pattern is created in the mask layer. Thereafter, the pattern in the mask layer is transferred to the silicon oxide layer using a first etching process, and then the mask layer is removed. The pattern in the silicon oxide layer is transferred to the SiCOH-containing layer using a second etching process formed from a process composition comprising NF3. Thereafter, the silicon oxide layer is removed using a third etching process.
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Lee Cheung
Tokyo Electron Limited
Wood Herron & Evans LLP
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