Method for MEMS threshold sensor packaging

Details Method for MEMS threshold sensor packaging Method for MEMS threshold sensor packaging

2011-04-19

2011-04-19

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C257S564000, C257SE21613

Reexamination Certificate

active

07927906

ABSTRACT:
Apparatus, methods, and systems for bonding a cover wafer to a MEMS threshold sensors located on a silicon disc. The cover wafer is trenched to form a region when bonded to the silicon wafer that produces a gap over the contact bond pads of the MEMS threshold sensor. The method includes a series of cuts that remove part of the cover wafer over the trenches to permit additional cuts that may avoid the contact bond pads of the MEMS threshold sensor. In addition the glass frit provides for isolation of the sensor with a hermetic seal. The cavity between the MEMS threshold sensor and the cover wafer may be injected with a gas such as nitrogen to influence the properties of the MEMS threshold sensor. The MEMS threshold sensor may be utilized to sense a threshold for pressure, temperature or acceleration.

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Kang, J.W., “Surface micromachined multi-layer moving gate field effecttransistor (MOGFET) pressure switch with integrated vacuum sealed cavity”,Twelfth IEEE International Conference on Micro Electro Mechanical Systems, (1999),499-504.

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