Optics: measuring and testing – By light interference – For dimensional measurement
Reexamination Certificate
2007-03-20
2007-03-20
Lee, Hwa (Andrew) (Department: 2877)
Optics: measuring and testing
By light interference
For dimensional measurement
Reexamination Certificate
active
10872524
ABSTRACT:
A thickness of a wafer during polishing operation is detected to accurately perform the polishing. A thickness measuring method, which measures the thickness of the wafer of wafer7in polishing a surface, comprises the steps of irradiating the thin film-like material during the surface polishing from a backside with probe light, measuring a reflectance spectrum with a dispersion type multi-channel spectroscope using a photodiode array which has particularly high sensitivity to light having a wavelength ranging from 1 to 2.4 μm, and calculating the thickness on the basis of a wave form of the reflectance spectrum. The surface polishing is performed while the thickness of the wafer7is measured by the above-described thickness measuring method, and the polishing is finished when the thickness of the wafer7reaches a target thickness.
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Hirai Tokumi
Isei Yoshito
Bacon & Thomas PLLC
Lee Hwa (Andrew)
Sumitomo Mitsubishi Silicon Corporation
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