Method for measuring the diameter of a single crystal ingot

Details Method for measuring the diameter of a single crystal ingot Method for measuring the diameter of a single crystal ingot

1995-06-07

1996-12-17

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 13, 117201, C30B 1520

Patent

active

055849300

ABSTRACT:
A method for measuring a diameter of a single crystal ingot pulled up in a single crystal pulling apparatus comprising: calculating the weight of the pulled-up single crystal, calculating the descent amount of the melt surface relative to the crucible wall from the calculated pulled-up weight of the grown single crystal, and then either correcting the value of the ingot diameter actually measured by the optical sensor in response to the descent amount of the melt surface level or raising the crucible by an amount equal to the descent amount of the surface level.

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