Semiconductor device manufacturing: process – Including control responsive to sensed condition – Electrical characteristic sensed
Reexamination Certificate
2006-05-02
2006-05-02
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Electrical characteristic sensed
C438S014000, C438S018000, C438S022000, C438S028000, C438S039000, C438S035000, C374S009000, C374S126000, C374S129000
Reexamination Certificate
active
07037733
ABSTRACT:
When the emissivity ε on the reverse face of a substrate10is measured during annealing processing for the substrate10,films made from a material that varies the emissivity ε, such as a first DPS film15used for forming a plug15A, a second DPS film17used for forming a capacitor lower electrode17A and a third DPS film20used for forming a capacitor upper electrode20A, are formed on the top face of the substrate10.On the other hand, no film made from a material that varies the emissivity ε, such as a DPS film, is formed on the reverse face of the substrate10.
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Hirase Junji
Kanasaki Emi
Kawase Fumitoshi
Naito Yasushi
Shibata Satoshi
Jr. Carl Whitehead
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
Mitchell James M.
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