Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2007-07-17
2007-07-17
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S014000, C117S015000, C117S020000, C117S202000, C117S932000
Reexamination Certificate
active
10531434
ABSTRACT:
A single crystal ingot is cut to an axial direction so as to including the central axis, a sample for measurement including regions [V], [Pv], [Pi] and [I] is prepared, and a first sample and second sample are prepared by dividing the sample into two so as to be symmetrical against the central axis. A first transition metal is metal-stained on the surface of the first sample and a second transition metal different from the first transition metal is metal-stained on the surface of the second sample. The first and second samples stained with the metals are thermally treated and the first and second transition metals are diffused into the inside of the samples. Recombination lifetimes in the whole of the first and second samples are respectively measured, and the vertical measurement of the first sample is overlapped on the vertical measurement of the second sample. The boundary between the regions [Pi] and [I] and the boundary between the regions [V] and [Pv] are respectively specified from the overlapped result.
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Abstract only of Publication No. 2002-102385 published Apr. 13, 2001, Mitsubishi Materials Silicon, “Silicon wafer without aggregate of dot-like defect”.
Furukawa Jun
Kurita Kazunari
Hiteshew Felisa
Reed Smith LLP
Sumitomo Mitsubishi Silicon Corporation
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