Method for measuring plasma properties in semiconductor processi

Details Method for measuring plasma properties in semiconductor processi Method for measuring plasma properties in semiconductor processi

1988-05-03

1989-08-22

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

118 501, 118620, 118712, 156643, 156646, 156345, 20419213, 20419233, 204298, 427 8, 427 38, B44C 122, B05D 306, H01L 21306, C03C 1500

Patent

active

048592773

ABSTRACT:
An apparatus and method for measuring the concentration profile of an active species across the surface of a semiconductor slice in a plasma reactor is disclosed that permits uniformity of etch and deposition across the surface of the semiconductor slice.

REFERENCES:
patent: 4491499 (1985-01-01), Derde et al.
patent: 4493745 (1985-01-01), Chen et al.
patent: 4609426 (1986-09-01), Ogawa et al.
patent: 4675072 (1987-06-01), Bennett et al.
patent: 4710261 (1987-12-01), Dennis
Khoury, "Real-Time Etch Plasma Monitor System", IBM Tech. Discl. Bulletin, vol. 25, No. 11A, Apr. 1983, pp. 5721-5723.

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