Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2007-09-04
2007-09-04
Elms, Richard T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S145000, C365S201000
Reexamination Certificate
active
11059777
ABSTRACT:
A semiconductor memory device precisely measures the offset voltage of a bit line sense amplifier. The semiconductor memory device of the invention includes: a bit line sense amplifier for amplifying a voltage difference between a bit line and an inversion bit line, which carry data written on a memory cell when the data is read; a data input/output line and an inversion data input/output line within a core region coupled to the bit line and the inversion bit line via one or more switches; a first external voltage supply pad connected to the data input/output line; a second external voltage supply pad connected to the inversion data input/output line; and an external voltage supply controller for switching a connection of the data input/output line and the first external voltage supply pad and a connection of the inversion data input/output line and the second external voltage supply pad.
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Do Chang-Ho
Son Jin-Seok
Elms Richard T.
Hynix / Semiconductor Inc.
Nguyen Dang
Townsend and Townsend / and Crew LLP
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