Method for measuring impurity metal concentration

Details Method for measuring impurity metal concentration Method for measuring impurity metal concentration

2006-11-28

2006-11-28

Hollington, Jermele (Department: 2829)

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

C324S765010, C702S183000

Reexamination Certificate

active

07141992

ABSTRACT:
There is provided a method for calculating a more accurate metal impurity concentration contained in a silicon wafer by correcting measured values with a calibration based on a dependent relationship of the minority carrier diffusion length with a period of time elapsing from the activation to the actual measurement, an electric resistivity, and a temperature if there is such a relationship, in the measurement of the metal impurity concentration by utilizing the surface photovoltage. In the calibration step, such dependent relationship may be obtained by utilizing the metal impurity concentration measured by methods of different principles and actually measured values are corrected in light of the dependent relationship in the measuring step such that the metal impurity concentration is measured more accurately.

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