Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-07-22
2008-07-22
Dinh, Son (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000
Reexamination Certificate
active
11529225
ABSTRACT:
A method for measuring hysteresis curves and anisotropic energy of magnetic memory units is disclosed. It comprises gradually applying different magnetic fields to a single-layer or a multilayer magnetic structure (such as a MRAM memory unit) by extra ordinary Hall effect, and recording the variation of the Hall voltage to obtain the hysteresis curve and anisotropic energy with specific instruments, and calculating the individual anisotropic energy value of the magnetic material of the single-layer or the multilayer magnetic structure.
REFERENCES:
patent: 5347485 (1994-09-01), Taguchi et al.
patent: 6946302 (2005-09-01), Deak
patent: 2004/0152218 (2004-08-01), Deak
Lee Jia-Mou
Weng Ming-Chi
Wu Te-Ho
Ye Lin-Hsiu
Dinh Son
National Yunlin University of Science and Technology
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