Method for measuring critical dimension of pattern on sample

Details Method for measuring critical dimension of pattern on sample Method for measuring critical dimension of pattern on sample

1996-12-20

1998-05-12

Nguyen, Kiet T.

Radiant energy

Inspection of solids or liquids by charged particles

Methods

H01J 3728

Patent

active

057509905

ABSTRACT:
In a pattern dimension measuring method for scanning a sample at a predetermined scanning pitch by a scanning probe as in a scanning electron microscope, forming a sample image using a scanning signal obtained from the sample, scanning a predetermined portion of a pattern to be measured in a sample image by said probe, and measuring a dimension of said predetermined portion by processing obtained scanning signal according to a predetermined algorithm, said scanning pitch is varied according to the case for positioning the pattern to be measured and the case for measuring the pattern dimension when observing in a low magnification, and said scanning pitch for measuring the pattern dimension is adjusted to be small, about a diameter of the probe.

REFERENCES:
patent: 5434409 (1995-07-01), Tsubusaki
patent: 5644512 (1997-07-01), Chernoff et al.

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