Method for measuring contamination in liquids at PPQ levels

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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Details

C257SE21521, C378S070000, C436S178000, C134S001300

Reexamination Certificate

active

07732225

ABSTRACT:
A method of manufacturing a semiconductor device includes placing a sample of a liquid chemical containing a contaminant on a substantially impurity-free surface of a substrate. The liquid chemical is evaporated, leaving the contaminant on the surface. The contaminant is concentrated in a scanning solution, which is then evaporated to form a residue. A concentration of the contaminant in the residue is determined.

REFERENCES:
patent: 5636256 (1997-06-01), Matumura et al.
patent: 5686314 (1997-11-01), Miyazaki
patent: 5866899 (1999-02-01), Hossain
patent: 6077776 (2000-06-01), Cho et al.
patent: 6421414 (2002-07-01), Huber
patent: 6423148 (2002-07-01), Aoki
patent: 6592676 (2003-07-01), Mertens et al.
patent: 6937691 (2005-08-01), Yamagami et al.
patent: 7399635 (2008-07-01), Hellin et al.
patent: 2002/0153482 (2002-10-01), Lin
patent: 2005/0162178 (2005-07-01), Steele et al.
patent: 2005/0170524 (2005-08-01), Hellin et al.
patent: 2005/0276378 (2005-12-01), Ito
Luke Lovejoy, et al., “Assessment of VPD/ICP-MS for Routine Contamination Monitoring in a High-Volume Production Fab” Future Fab International, Issue 13, pp. 140-149.

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