Method for marking a substrate using ionized gas

Details Method for marking a substrate using ionized gas Method for marking a substrate using ionized gas

1995-06-05

1997-05-13

Niebling, John

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

20419237, B44C 122

Patent

active

056288700

ABSTRACT:
An apparatus suitable for marking a substrate comprises a holder for holding a substrate and a ground for electrically grounding the substrate. At least one needle electrode has a tip located proximate to the substrate so that there is a gap between the substrate and the tip. A high voltage source provides a current to the electrode tip to ionize the gas in the gap so that the ionized gas can impinge upon and mark the substrate.

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