Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-01-15
2000-03-07
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438633, 438747, 451 41, 451285, 451384, 216 88, 156345, H01L 21302
Patent
active
06033987&
ABSTRACT:
A method for chemically-and-mechanically polishing a semiconductor wafer surface is disclosed. It includes the steps of: (a) providing a mechanical polishing pad; (b) placing a pressure-sensitive film on top of a wafer surface to be polished by the mechanical polishing pad, the pressure-sensitive film contains materials that will show pressure-dependent colors when subject to an external pressure; (c) commencing a chemically-and-mechanically polishing process so that the mechanical polishing pad exerts a pressure on the pressure-sensitive film; (d) scanning the pressure-dependent color pattern on the pressure-sensitive film; (e) converting the pressure-dependent color pattern into a pressure distribution; and (f) adjusting the mechanical polishing pad, or a leveling of the wafer mounting, or both, according to the pressure distribution obtained in step (e).
REFERENCES:
patent: 5725420 (1998-03-01), Torii
patent: 5931719 (1999-08-01), Nagahara et al.
patent: 5958794 (1999-09-01), Bruxvoort et al.
Feng Min-Shinn
Lin Chi-Fa
Tseng Wen-Tsu
Liauh W. Wayne
Utech Benjamin
Vinh Lan
Winbond Electronics Corp.
LandOfFree
Method for mapping and adjusting pressure distribution of CMP pr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for mapping and adjusting pressure distribution of CMP pr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for mapping and adjusting pressure distribution of CMP pr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-362652