Method for manufacturing wiring in groove

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438648, 438650, 438660, H01L 2126

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active

056565429

ABSTRACT:
In a semiconductor device and a method for manufacturing the same according to the present invention, for example, an insulating film is deposited on a silicon substrate, and a concave groove is formed in the insulating film in accordance with a predetermined wiring pattern. Titanium and palladium are deposited in sequence on the insulating film to form a titanium film and a palladium film, respectively. A silver film is formed on the palladium film by electroplating, and a groove-shaped silver wiring layer is formed by polishing. The resultant structure is annealed at a temperature of about 700.degree. C., and an intermetallic compound is formed by alloying the titanium film and palladium film with each other. Consequently, a burying type wiring layer whose resistance is lower than that of aluminum, is constituted by the silver wiring layer and intermetallic compound.

REFERENCES:
patent: 4082568 (1978-04-01), Lindmayer
patent: 4673593 (1987-06-01), Himoto
patent: 5045481 (1991-09-01), Schilling et al.
patent: 5162262 (1992-11-01), Ajika et al.
patent: 5240497 (1993-08-01), Shachom et al.
patent: 5391517 (1995-02-01), Gelafos et al.
patent: 5529634 (1996-06-01), Miyata et al.
J. Electrochem. Sco., vol. 138, No. 12, Dec. 1991 P3618-3624.

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