Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Having heterojunction
Patent
1998-07-02
2000-06-20
Monin, Jr., Donald L.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Having heterojunction
438322, 438336, H01L 21331
Patent
active
060777532
ABSTRACT:
The present invention relates to a vertical bipolar power transistor primarily intended for radio frequency applications and to a method for manufacturing the bipolar power transistor. The power transistor comprises a substrate (13), a collector layer (15) of a first conductivity type on the substrate, a base (19) of a second conductivity type electrically connected to the collector layer, an emitter (21) of the first conductivity type electrically connected to the base, the base and the emitter each being electrically connected to a metallic interconnecting layer (31,33), the interconnecting layers (31,33) being at least in parts separated from the collector layer (15) by an insulation oxide (17). According to the invention the power transistor substantially comprises a field shield (25) electrically connected to the emitter, and located between the metallic interconnecting layer of the base and the insulation oxide.
REFERENCES:
patent: 4081292 (1978-03-01), Aoki et al.
patent: 4573064 (1986-02-01), Mclevige et al.
patent: 5034337 (1991-07-01), Mosher et al.
patent: 5204735 (1993-04-01), Yamamoto et al.
patent: 5373183 (1994-12-01), Beasom
patent: 5455448 (1995-10-01), Benjamin
patent: 5488252 (1996-01-01), Johansson et al.
patent: 5501992 (1996-03-01), Nakamura
patent: 5606195 (1997-02-01), Hooper et al.
patent: 5629554 (1997-05-01), Maas et al.
Allison, "Silicon Bipolar Microwave Power Transistors," IEEE Transactions on Microwave Theory and Techniques, vol. 27, No. 5, May 1979, pp. 415-422.
Cooke, "Microwave Transistors: Theory and Design," Proceedings of the IEEE, vol. 59, No. 8, Aug. 1971, pp. 1163-1181.
PCT International Search Report.
Johansson Ted
Leighton Larry Clifford
Monin, Jr. Donald L.
Pham Hoai
Telefonaktiebolaget LM Ericsson
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