Method for manufacturing thin-film transistors

Details Method for manufacturing thin-film transistors Method for manufacturing thin-film transistors

2010-04-07

2011-12-20

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Gettering of semiconductor substrate

C438S158000, C257SE21318, C257SE21414

Reexamination Certificate

active

08080449

ABSTRACT:
Gate electrodes are formed on a substrate. A gate insulation film is formed so as to cover the gate electrodes. A semiconductor layer is formed in regions on the gate insulation film in a region which overlap with at least the gate electrodes. Plasma treatment is applied to the semiconductor layer using a gas which contains a dopant thus increasing impurity concentration of a surface layer of the semiconductor layer. A conductive film is formed on the surface layer of the semiconductor layer to which the plasma treatment is applied. A source electrode and a drain electrode are formed by etching the conductive film.

REFERENCES:
patent: 5627089 (1997-05-01), Kim et al.
patent: 2002/0009836 (2002-01-01), Takechi
patent: 2003/0207503 (2003-11-01), Yamazaki et al.
patent: 2009/0152635 (2009-06-01), Jeong et al.
patent: 11-87721 (1999-03-01), None

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