Method for manufacturing thin film transistor in display device

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S028000, C438S149000, C438S654000

Reexamination Certificate

active

07491590

ABSTRACT:
The present invention provides a technique by which a component forming a display device, such as a wiring can be formed with good adhesion.In the invention, a component forming a thin film transistor, a display device, or the like is formed with a material which is the same as at least one of the substances forming the formation subject surface added (mixed); thus, adhesion between the component and the formation subject is improved. An insulating layer formed over the component is formed with a laminate of a first insulating layer containing an organic material and a second insulating layer containing an inorganic material; thus, the insulating layer sufficiently covers irregularities on the surface of the component, and is also dense enough so as to be reliable as an insulating layer.

REFERENCES:
patent: 4051074 (1977-09-01), Asada
patent: 5184399 (1993-02-01), Ueno et al.
patent: 5286927 (1994-02-01), Ueno et al.
patent: 6338893 (2002-01-01), Kodera et al.
patent: 6380011 (2002-04-01), Yamazaki et al.
patent: 6555420 (2003-04-01), Yamazaki
patent: 6979416 (2005-12-01), Nakao et al.
patent: 7067337 (2006-06-01), Yudasaka et al.
patent: 7176069 (2007-02-01), Yamazaki et al.
patent: 2006/0158482 (2006-07-01), Nakamura et al.
patent: 2006/0163580 (2006-07-01), Yamazaki et al.
patent: 463872 (1992-01-01), None
patent: 08-227153 (1996-09-01), None
patent: 10-319580 (1998-12-01), None
patent: 11-251259 (1999-09-01), None
patent: 2000-150906 (2000-05-01), None

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